دورية أكاديمية

Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

التفاصيل البيبلوغرافية
العنوان: Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric
المؤلفون: Martin, Dominik, Müller, Johannes, Schenk, Tony, Arruda, Thomas M., Kumar, Amit, Strelcov, Evgheni, Yurchuk, Ekaterina, Müller, Stefan, Pohl, Darius, Schröder, Uwe, Kalinin, Sergei V., Mikolajick, Thomas
المصدر: Martin , D , Müller , J , Schenk , T , Arruda , T M , Kumar , A , Strelcov , E , Yurchuk , E , Müller , S , Pohl , D , Schröder , U , Kalinin , S V & Mikolajick , T 2014 , ' Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric ' , Advanced Materials , vol. 26 , no. 48 , pp. 8198-8202 . https://doi.org/10.1002/adma.201403115Test
سنة النشر: 2014
المجموعة: Queen's University Belfast: Research Portal
مصطلحات موضوعية: HfO2, Si-doping, ferroelectricity, antiferroelectricity, electromechanical response mechanisms, piezoresponse force microscopy (PFM)
الوصف: Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
نوع الوثيقة: article in journal/newspaper
اللغة: English
العلاقة: https://pure.qub.ac.uk/en/publications/41cc9184-b5a2-4fbe-8e58-da480f1f2473Test
DOI: 10.1002/adma.201403115
الإتاحة: https://doi.org/10.1002/adma.201403115Test
https://pure.qub.ac.uk/en/publications/41cc9184-b5a2-4fbe-8e58-da480f1f2473Test
حقوق: info:eu-repo/semantics/restrictedAccess
رقم الانضمام: edsbas.578FDF41
قاعدة البيانات: BASE