تقرير
Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells
| العنوان: | Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells |
|---|---|
| المؤلفون: | Seliuta, D., Cechavicius, B., Kavaliauskas, J., Krivaite, G., Grigelionis, I., Balakauskas, S., Valusis, G., Sherliker, B., Halsall, M. P., Lachab, M., Khanna, S. P., Harrison, P., Linfield, E. H. |
| سنة النشر: | 2007 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter |
| الوصف: | The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature. Comment: 4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius |
| نوع الوثيقة: | Working Paper |
| الوصول الحر: | http://arxiv.org/abs/0711.0438Test |
| رقم الانضمام: | edsarx.0711.0438 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |