التفاصيل البيبلوغرافية
| العنوان: |
Large-scale Fabrication of Vertically Aligned ZnO Nanowire Arrays |
| Document Number: |
20110309354 |
| تاريخ النشر: |
December 22, 2011 |
| Appl. No: |
13/091855 |
| Application Filed: |
April 21, 2011 |
| مستخلص: |
In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes. |
| Inventors: |
Wang, Zhong L. (Marietta, GA, US); Das, Suman (Atlanta, GA, US); Xu, Sheng (Atlanta, GA, US); Yuan, Dajun (Atlanta, GA, US); Guo, Rui (Atlanta, GA, US); Wei, Yaguang (Atlanta, GA, US); Wu, Wenzhuo (Atlanta, GA, US) |
| Assignees: |
GEORGIA TECH RESEARCH CORPORATION (Atlanta, GA, US) |
| Claim: |
1. A method for growing a nanowire array, comprising the steps of: (a) placing a photoresist layer onto a nanowire growth layer configured for growing nanowires therefrom; (b) exposing the photoresist layer to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation; (c) exposing the photoresist layer to the coherent light interference pattern along a second orientation, transverse to the first orientation; (d) developing the photoresist layer so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer; and (e) placing the photoresist layer and the nanowire growth layer into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes. |
| Claim: |
2. The method of claim 1, wherein the second orientation has an angular distance of 90° from the first orientation. |
| Claim: |
3. The method of claim 1, wherein the coherent light interference pattern is generated by steps comprising: (a) generating a first laser beam; (b) splitting a the first laser beam using a beam splitter to generate a second laser beam; and (c) directing the first laser beam and the second laser beam onto the photoresist layer so that the second laser beam and the first laser beam form the interference pattern. |
| Claim: |
4. The method of claim 1, wherein the nanowire growth layer are generated using steps comprising: (a) applying a ZnO seed layer to a substrate; and (b) growing a dense layer of nanowires from the seed layer. |
| Claim: |
5. A method of making a light emitting structure, comprising the steps of: (a) growing a n-doped ZnO nanowire array from a p-doped substrate; (b) depositing a first conductive layer onto the p-doped substrate so as to form an Ohmic contact with the n-doped ZnO nanowire array; (c) depositing an insulating layer onto the first conductive layer; and (d) depositing a second conductive layer onto the insulative layer so as to form an Ohmic contact with the n-doped nanowire array. |
| Claim: |
6. The method of claim 5, further comprising an insulating layer disposed between the first conductive layer and the second conductive layer. |
| Claim: |
7. The method of claim 6, wherein the insulating layer comprises PMMA. |
| Claim: |
8. The method of claim 5, wherein the crystalline substrate comprises p-doped GaN. |
| Claim: |
9. The method of claim 8, wherein the p-doped GaN is doped with Mg. |
| Claim: |
10. The method of claim 5, wherein the step of growing a n-doped ZnO nanowire array comprises the steps of: (a) placing a photoresist layer onto a nanowire growth layer configured for growing nanowires therefrom; (b) exposing the photoresist layer to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation; (c) exposing the photoresist layer to the coherent light interference pattern along a second orientation, transverse to the first orientation; (d) developing the photoresist layer so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer; and (e) placing the photoresist layer and the nanowire growth layer into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes. |
| Claim: |
11. The method of claim 10, wherein the second orientation has an angular distance of 90° from the first orientation. |
| Claim: |
12. The method of claim 10, wherein the coherent light interference pattern is generated by steps comprising: (a) generating a first laser beam; (b) splitting a the first laser beam using a beam splitter to generate a second laser beam; and (c) directing the first laser beam and the second laser beam onto the photoresist layer so that the second laser beam and the first laser beam form the interference pattern. |
| Claim: |
13. The method of claim 10, wherein the nanowire growth layer are generated using steps comprising: (a) applying a ZnO seed layer to a substrate; and (b) growing a dense layer of nanowires from the seed layer. |
| Claim: |
14. A light emitting structure, comprising: (a) a crystalline substrate that is doped with a p-type material; (b) an ordered array of n-doped ZnO nanowires extending upwardly from the crystalline substrate; (c) a first conductive layer disposed adjacent to the crystalline substrate so as to form an Ohmic contact with the n-doped ZnO nanowires; (d) a second conductive layer, spaced apart from the first conductive layer, disposed so as to form an Ohmic contact with the n-doped ZnO nanowires; (e) a voltage source configured to apply a voltage, between the first conductive layer and the second conductive layer, sufficient to cause the n-doped ZnO nanowires to emit light. |
| Claim: |
15. The light emitting structure of claim 14, further comprising an insulating layer disposed between the first conductive layer and the second conductive layer. |
| Claim: |
16. The light emitting structure of claim 15, wherein the insulating layer comprises PMMA. |
| Claim: |
17. The light emitting structure of claim 14, wherein the crystalline substrate comprises p-doped GaN. |
| Claim: |
18. The light emitting structure of claim 17, wherein the p-doped GaN is doped with Mg. |
| Current U.S. Class: |
257/43 |
| Current International Class: |
01; 01; 01; 82 |
| رقم الانضمام: |
edspap.20110309354 |
| قاعدة البيانات: |
USPTO Patent Applications |
