المؤلفون: Zhang, Shengke, Espinoza, Angel E., Garcia, Ricardo, Arribas, Alejandro Pozo, Strittmatter, Robert

المصدر: IEEE Power Electronics Magazine; 2024, Vol. 11 Issue: 1 p55-61, 7p

مستخلص: Transient voltage overshoot is a common phenomenon in wide bandgap (WBG) power semiconductors due to high frequency and fast switching applications. An application driven repetitive transient off-state overvoltage datasheet specification is desired for design engineers. In this work, a 1% duty-cycle-based overvoltage specification is proposed by estimating the total lifetime before the dynamic $\mathrm{R}_{\mathrm{DS}(\text { on) }}$ shift exceeds 20% increase to its initial value under 120% of $\mathrm{V}_{\mathrm{DS}, \text { Max }}$ continuous bias and ${75}^{\circ} \mathrm{C}$ junction temperature. This 1% duty cycle suggests that GaN devices can withstand a 1% duration of each switching period repetitively over 25 years of continuous switching.

المؤلفون: Viegas, Rafael G., Sanches, Murilo N., Chen, Alan A., Paulovich, Fernando V., Garcia, Angel E., Leite, Vitor B. P.

المصدر: Journal of Chemical Information & Modeling; 9/11/2023, Vol. 63 Issue 17, p5641-5649, 9p

المؤلفون: Richardson, Abigail D., L'Heureux, Scott J., Henry, Ava M., McDonough, Elizabeth A., Fleischer, Cameron J., McMullen, Cameron C., Reynafarje, Trevor R., Guerrero, Gisele P., Williams, Quinn E., Zhou, Qingyang, Malouf, David M., Thurman, Spencer E., Soeller, Julia E., Sheng, Jerry Y., Medhurst, Erica A., Canales, Angel E., Cecil, Ty B., Houk, K. N., Costanzo, Philip J., Bercovici, Daniel A.

المصدر: Journal of Organic Chemistry; 8/18/2023, Vol. 88 Issue 16, p11683-11693, 11p

المؤلفون: Richardson, Abigail D., L’Heureux, Scott J., Henry, Ava M., McDonough, Elizabeth A., Fleischer, Cameron J., McMullen, Cameron C., Reynafarje, Trevor R., Guerrero, Gisele P., Williams, Quinn E., Zhou, Qingyang, Malouf, David M., Thurman, Spencer E., Soeller, Julia E., Sheng, Jerry Y., Medhurst, Erica A., Canales, Angel E., Cecil, Ty B., Houk, K. N., Costanzo, Philip J., Bercovici, Daniel A.

المصدر: The Journal of Organic Chemistry; August 2023, Vol. 88 Issue: 16 p11683-11693, 11p

مستخلص: Ylidenenorbornadienes (YNDs), prepared by [4 + 2] cycloadditions between fulvenes and acetylene carboxylates, react with thiol nucleophiles to yield mixtures of four to eight diastereomers depending on the symmetry of the YND substrate. The mixtures of diastereomers fragment via a retro-[4 + 2] cycloaddition with a large variation in rate, with half-lives ranging from 16 to 11,000 min at 80 °C. The diastereomer-enriched samples of propane thiol adducts [YND-propanethiol (PTs)] were isolated and identified by nuclear Overhauser effect spectroscopy (NOESY) correlations. Simulated kinetics were used to extrapolate the rate constants of individual diastereomers from the observed rate data, and it correlated well with rate constants measured directly and from isolated diastereomer-enriched samples. The individual diastereomers of a model system fragment at differing rates with half-lives ranging from 5 to 44 min in CDCl3. Density functional theory calculations were performed to investigate the mechanism of fragmentation and support an asynchronous retro-[4 + 2] cycloaddition transition state. The computations generally correlated well with the observed free energies of activation for four diastereomers of the model system as a whole, within 2.6 kcal/mol. However, the observed order of the fragmentation rates across the set of diastereomers deviated from the computational results. YNDs display wide variability in the rate of fragmentation, dependent on the stereoelectronics of the ylidene substituents. A Hammett study showed that the electron-rich aromatic rings attached to the ylidene bridge increase the fragmentation rate, while electron-deficient systems slow fragmentation rates.

المؤلفون: Hemmati, Hamid, Robinson, Bryan S., Srinivasan, Meera, Velasco, Angel E., Wright, Malcolm W., Meenehan, Seán, Peng, Michael, Rogalin, Ryan, Richard, Nate, Biswas, Abhijit, Aguilar, Alexa, Beregovski, Yuri, Brewer, Mark, Buehlman, William, Allmaras, Jason, Ortiz, Gerardo, Garkanian, Vachik

المصدر: Proceedings of SPIE; March 2023, Vol. 12413 Issue: 1 p124130Q-124130Q-12, 12288883p

المؤلفون: Hemmati, Hamid, Robinson, Bryan S., Srinivasan, Meera, Alerstam, Erik, Wollman, Emma, Rogalin, Ryan, Meenehan, Seán, Shaw, Matthew, Velasco, Angel E., Biswas, Abhijit, Richard, Nate, Cho, Daniel, Garkanian, Vachik, Allmaras, Jason, Miles, Gregory, Grigorian, Edwin

المصدر: Proceedings of SPIE; March 2023, Vol. 12413 Issue: 1 p124130R-124130R-12, 12288883p

المؤلفون: Malouf, David M., Richardson, Abigail D., L'Heureux, Scott J., McDonough, Elizabeth A., Henry, Ava M., Sheng, Jerry Y., Medhurst, Erica A., Canales, Angel E., Fleischer, Cameron J., Cecil, Ty B., Thurman, Spencer E., McMullen, Cameron C., Costanzo, Philip J., Bercovici, Daniel A.

المصدر: Organic Letters; 4/22/2022, Vol. 24 Issue 15, p2793-2797, 5p

المؤلفون: Janke, J. Joel, Yu, Yanlei, Pomin, Vitor H., Zhao, Jing, Wang, Chunyu, Linhardt, Robert J., García, Angel E.

المصدر: Journal of Chemical Theory & Computation; 3/8/2022, Vol. 18 Issue 3, p1894-1904, 11p

المؤلفون: Pulavarti, Surya V. S. R. K., Maguire, Jack B., Yuen, Shirley, Harrison, Joseph S., Griffin, Jermel, Premkumar, Lakshmanane, Esposito, Edward A., Makhatadze, George I., Garcia, Angel E., Weiss, Thomas M., Snell, Edward H., Kuhlman, Brian, Szyperski, Thomas

المصدر: Journal of Physical Chemistry B; 2/17/2022, Vol. 126 Issue 6, p1212-1231, 20p

المؤلفون: Urbanczyk, Jonathan P., Mixon, Timothy A., Konda, Subbareddy, Caldera, Angel E.

المصدر: Baylor University Medical Center Proceedings; Jan2023, Vol. 36 Issue 1, p106-108, 3p

مستخلص: Ventricular septal defect (VSD) rarely occurs following transcatheter aortic valve implantation (TAVI). We report two patients who developed VSD following TAVI. One case was a Gerbode defect treated by percutaneous closure, and the second was a restrictive perimembranous VSD managed conservatively. [ABSTRACT FROM AUTHOR]

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