Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology
العنوان: | Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology |
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المؤلفون: | Qing-Ming Zeng, Xianjie Li, Daomin Cai, Zhi-Gong Wang, Yana Guo, Anhuai Xu, Ming Qi, Yunzhang Pu, Xiaojie Chen, Rong Wang, Yonglin Zhao |
المصدر: | Frontiers of Optoelectronics in China. 1:336-340 |
بيانات النشر: | Springer Science and Business Media LLC, 2008. |
سنة النشر: | 2008 |
مصطلحات موضوعية: | Materials science, business.industry, Circuit design, Heterojunction bipolar transistor, Photodetector, Integrated circuit, Cutoff frequency, Electronic, Optical and Magnetic Materials, law.invention, Responsivity, law, Optoelectronics, Electrical and Electronic Engineering, business, Common emitter, Dark current |
الوصف: | The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/InGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs heterojunction bipolar transistor (HBT) process. The InP/InGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 A/W at λ = 1.55 μm, a dark current less than 10 nA at a bias of −5 V and a −3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223–1 pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 109 at 2.5 Gbit/s is less than −15.2 dBm. |
تدمد: | 1674-4594 1674-4128 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::768534627a34c0884e490ad5264e4c16Test https://doi.org/10.1007/s12200-008-0059-4Test |
حقوق: | CLOSED |
رقم الانضمام: | edsair.doi...........768534627a34c0884e490ad5264e4c16 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 16744594 16744128 |
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