دورية أكاديمية
Nanoscale Imaging and Control of Resistance Switching in VO[sub]2 at Room Temperature
| العنوان: | Nanoscale Imaging and Control of Resistance Switching in VO[sub]2 at Room Temperature |
|---|---|
| المؤلفون: | Hoffman, Jenny Eve, Kim, Jeehoon, Ko, Changhyun, Frenzel, Alex James, Ramanathan, Shriram |
| المصدر: | Kim, Jeehoon, Changhyun Ko, Alex Frenzel, Shriram Ramanathan, and Jennifer E. Hoffman. 2010. Nanoscale imaging and control of resistance switching in VO[sub]2 at room temperature. Applied Physics Letters 96 (213106). |
| بيانات النشر: | American Institute of Physics, 2010. |
| سنة النشر: | 2010 |
| المجموعة: | FAS Scholarly Articles |
| الوصف: | We demonstrate controlled local phase switching of a VO[sub]2 film using a biased conducting atomic force microscope tip. After application of an initial, higher ‘training’ voltage, the resistance transition is hysteretic with IV loops converging upon repeated voltage sweep. The threshold Vset to initiate the insulator-to-metal transition is on order ∼ 5 V at room temperature, and increases at low temperature. We image large variations in Vset from grain to grain. Our imaging technique opens up the possibility for an understanding of the microscopic mechanism of phase transition in VO[sub]2 as well as its potential relevance to solid state devices. Engineering and Applied Sciences Physics |
| نوع الوثيقة: | Journal Article |
| اللغة: | English |
| تدمد: | 0003-6951 |
| العلاقة: | Applied Physics Letters |
| DOI: | 10.1063/1.3435466 |
| الوصول الحر: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:4342532Test |
| رقم الانضمام: | edshld.1.4342532 |
| قاعدة البيانات: | Digital Access to Scholarship at Harvard (DASH) |
| تدمد: | 00036951 |
|---|---|
| DOI: | 10.1063/1.3435466 |