التفاصيل البيبلوغرافية
| العنوان: |
Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating. |
| المؤلفون: |
Phuc, Huynh V.1, Ilyasov, Victor V.2, Hieu, Nguyen N.1, Amin, Bin3, Nguyen, Chuong V.4 chuong.vnguyen@lqdtu.edu.vn |
| المصدر: |
Journal of Alloys & Compounds. Jun2018, Vol. 750, p765-773. 9p. |
| مصطلحات موضوعية: |
*GALLIUM selenide, *HETEROSTRUCTURES, *GRAPHENE, *SCHOTTKY barrier diodes, *VAN der Waals forces, *OPTOELECTRONIC devices, *FIELD-effect transistors |
| مستخلص: |
Graphene-based van der Waals heterostructures are expected recently to design and fabricate many novel electronic and optoelectronic devices. The combination of the electronic structures of graphene and graphene-like GaSe monolayer ( g -GaSe) in an ultrathin heterostructure has been realized experimentally, such as graphene/ g -GaSe field effect transistor and dual Schottky diode device. In the present work, we investigate the electronic properties of the graphene/ g -GaSe heterostructures under the applied electric field, in-plane strains, and interlayer coupling. Our results show that the electronic properties of the graphene/ g -GaSe heterostructures are well preserved owing to a weak vdW interaction. Especially, a tiny band gap of 13 meV has opened in the presence of the g -GaSe monolayer. We found that the n -type Schottky contact is formed in the graphene/ g -GaSe heterostructure with a Schottky barrier height of 0.86 eV, which can be efficiently modulated by applying the electric field, in-plane strains, and interlayer coupling. Furthermore, a transformation from the n -type to p -type Schottky contact is observed when the applied electric field is larger than 0.1 V/Å or the interlayer distance is smaller than 3.2 Å. Our results may provide helpful information to design and fabricate the future graphene-based vdW heterostructures, such as graphene/ g -GaSe heterostructure and understand the physics mechanism in the graphene-based 2D vdW heterostructures. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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