دورية أكاديمية

n-type SiGe heterostructures for THz intersubband transitions

التفاصيل البيبلوغرافية
العنوان: n-type SiGe heterostructures for THz intersubband transitions
المؤلفون: De Seta, M., Capellini, G., Ciasca, G., Busby, Y., Evangelisti, F., Nicotra, G., Nardone, M., Ortolani, M., Virgilio, M., Grosso, G., Nucara, A., Calvani, P.
المصدر: De Seta , M , Capellini , G , Ciasca , G , Busby , Y , Evangelisti , F , Nicotra , G , Nardone , M , Ortolani , M , Virgilio , M , Grosso , G , Nucara , A & Calvani , P 2009 , n-type SiGe heterostructures for THz intersubband transitions . in 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 . , 5394721 , pp. 513-514 , 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 , Genoa , Italy , 26/07/09 .
سنة النشر: 2009
المجموعة: Research Portal - University of Namur / Portail de la recherche de l'Université de Namur
مصطلحات موضوعية: Silicon germanium, Spectroscopy, Raman scattering, Electron optics, Stimulated emission, Photonic band gap
الوصف: Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si 1-x Ge x barriers [0.2
نوع الوثيقة: article in journal/newspaper
اللغة: English
ردمك: 978-981-08-3694-8
981-08-3694-5
العلاقة: https://researchportal.unamur.be/en/publications/5d88cb49-ce5e-4a49-8870-f83381ef2644Test; urn:ISBN:9789810836948
الإتاحة: https://researchportal.unamur.be/en/publications/5d88cb49-ce5e-4a49-8870-f83381ef2644Test
http://www.scopus.com/inward/record.url?scp=77950989425&partnerID=8YFLogxKTest
حقوق: info:eu-repo/semantics/restrictedAccess
رقم الانضمام: edsbas.5F5A5C52
قاعدة البيانات: BASE