مؤتمر
Ion implantation into Si covered by HfO2 or SiO2 film
| العنوان: | Ion implantation into Si covered by HfO2 or SiO2 film |
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| المؤلفون: | Shi, H, Yu, M, Huang, R, Zhang, X, Wang, YY |
| المساهمون: | Shi, H (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| المصدر: | SCI ; EI |
| سنة النشر: | 2004 |
| المجموعة: | Peking University Institutional Repository (PKU IR) / 北京大学机构知识库 |
| مصطلحات موضوعية: | HfO2, ion implantation, molecular dynamics, Monte Carlo, range profiles, simulation |
| الوصف: | Ion implantations into HfO2 and SiO2 are simulated comparatively by using a molecular dynamics simulator LEACS [1]. With precise physical models and high efficiency algorithms implemented in LEACS, the simulated results accurately agree with the SIMS data. Based on the verification of the LEACS simulator, Oxide Thickness Modulation Effect (OTME for short) has been quantitatively investigated by simulating implantations in HfO2/Si and SiO2/Si multiplayer structures, respectively. A much more drastic OTME for implantation in HfO2/Si is observed from simulation. It is found that if HfO2 replaces SiO2 as the gate dielectric, the shift of the range profiles in Si substrate is in the order of several 10%s of the total junction depth, which will have a significant impact on MOS device performance in IC process of next decade. ; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000226292200039&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Test ; Materials Science, Multidisciplinary ; Physics, Condensed Matter ; EI ; CPCI-S(ISTP) ; 0 |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| تدمد: | 0277-786X |
| العلاقة: | FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS.5774(176-179).; 1061687; http://hdl.handle.net/20.500.11897/293804Test; WOS:000226292200039 |
| DOI: | 10.1117/12.607558 |
| الإتاحة: | https://doi.org/20.500.11897/293804Test https://doi.org/10.1117/12.607558Test https://hdl.handle.net/20.500.11897/293804Test |
| رقم الانضمام: | edsbas.2CF3FBC8 |
| قاعدة البيانات: | BASE |
| تدمد: | 0277786X |
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| DOI: | 10.1117/12.607558 |