المؤلفون: Lin, Jer-Shyong, Liu, Cheng-Kai

المساهمون: 林哲雄

مصطلحات موضوعية: D-FREE SUBSETS, FUNCTIONAL IDENTITIES, LINEAR-MAPS, SEMIPRIME RINGS

الوقت: 7

وصف الملف: 106 bytes; text/html

العلاقة: Linear Algebra and Its Applications,Elsevier,Volume: 428,Issue: 7,Pages: 1601-1609,Published: APR 1 2008; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/45581Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/45581Test

المؤلفون: Lai, Han-Chao, Cheng, Kai-Yuan, King, Ya-Chin, Lin, Chrong-Jung

المساهمون: 林崇榮

مصطلحات موضوعية: Advanced cmos, Cell sizes, Cmos logic process, CMOS one time programming (OTP), Cmos technologies, Compatible process -

الوقت: 45

العلاقة: IEEE ELECTRON DEVICE LETTERS, Institute of Electrical and Electronics Engineers, Volume 28, Issue 9, SEP 2007, Pages 837-839; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72506Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72506Test

المؤلفون: Lin,Yu-Tsun, Chen,Chun-Yu, Hsiung,Chang-Po, Cheng,Kai-Wen, Gan,Jon-Yiew

المساهمون: 甘炯耀

مصطلحات موضوعية: Nanostructured materials, Ruthenium compounds, Crystal growth, Sputtering, Metallorganic chemical vapor deposition, Synthesis, Electron emission

الوقت: 3

وصف الملف: application/pdf; 252458 bytes

العلاقة: Access to this article requires a subscription or AIP Article Pack, or rent it for $0.99. Log In Applied Physics Letters,Browse,Volume 89,Issue 6,NANOSCALE SCIENCE AND DESIGN; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52261Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52261Test

المؤلفون: Lin, Jer-Shyong, Liu, Cheng-Kai

المساهمون: 林哲雄

مصطلحات موضوعية: PRIME-RINGS, LIE IDEALS

الوقت: 7

وصف الملف: 120 bytes; text/html

العلاقة: TAIWANESE JOURNAL OF MATHEMATICS,Volume: 10,Issue: 5,Pages: 1183-1192,Published: SEP 2006; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/45584Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/45584Test

المؤلفون: Cheng, Kai-Wen, Lin, Yu-Tsun, Chen, Chun-Yu, Hsiung, Chang-Po, Gan, Jon-Yiew, Yeh, Jien-Wei, Hsieh, Chin-Hua, Chou, Li-Jen

المساهمون: 甘炯耀

مصطلحات موضوعية: titanium compounds, ruthenium compounds, nanostructured materials, sputter deposition, vapour phase epitaxial growth, transmission electron microscopy

الوقت: 3

وصف الملف: application/pdf; 295549 bytes

العلاقة: Applied Physics Letters,Browse,Volume 88,Issue 4,NANOSCALE SCIENCE AND DESIGN; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52292Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52292Test

المؤلفون: 鄭開騰, Cheng, Kai-Teng

المساهمون: 潘犀靈

مصطلحات موضوعية: freezing phase algorithm, radio over fiber, adaptive control, Gerchberg-Saxton algorithm

وصف الملف: 89279 bytes; application/pdf

العلاقة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/85905Test; http://nthur.lib.nthu.edu.tw/dspace/bitstream/987654321/85905/1/GH02101066527.pdfTest

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/85905Test
http://nthur.lib.nthu.edu.tw/dspace/bitstream/987654321/85905/1/GH02101066527.pdfTest

المؤلفون: Cheng, Kai-Yu, 鄭凱予

المساهمون: 黃智方, Huang, Chih-Fang

مصطلحات موضوعية: 碳化矽, 蕭基二極體, 溝渠結構, 高電壓, 位障蕭基二極體

الوقت: 47

العلاقة: [1]H. S. Lee, ”High Power Bipolar Junction Transistors in Silicon Carbide,” ISRN KTH/EKT/FR-2005/6-SE. [2]R. S. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, and J. W. Palmour, “SiC Power Schottky and PiN Diodes,” IEEE Trans. Electron Devices, Vol. 49, pp. 665-671, 2002. [3]C. M. Zetterling, “Process Technology for Silicon Carbide Devices,” The Institution of Electrical Engineers, 2002. [4]R. S. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, and J. W. Palmour, “SiC Power Schottky and PiN Diodes,” IEEE Trans. Electron Devices, Vol. 49, pp. 665-671, 2002. [5]B. J. Baliga, Modern Power Devices, New York, Wiley, 1987. [6]B. J. Baliga, Power Semiconductor Devices, Boston, PWS, 1996. [7]R. Singh, S. H. Ryu, J. W. Palmour, A. R. Hefner, and J. Lai, “1500V, 4Amp 4H-SiC JBS Diodes,” IEEE Int. Symp. on Power Semiconductor Devices and ICs, pp. 101-104 , 2000. [8]R. Singh, D. C. Capell, A. R. Hefner, J. Lai, and J. W. Palmour, “High-Power 4H-SiC JBS Rectifiers,” IEEE Trans. Electron Devices, Vol.49, No.11, 2002. [9]B. J. Baliga, “The pinch rectifier: A low-forward-drop high-speed power diode,” IEEE Electron Device Lett., vol. EDL-5, no. 6, pp. 194–196, 1984. [10]C.-M. Zetterling, F. Dahlquist, N. Lundberg, M. Ostling, K. Rottner, and L. Ramberg, “Junction barrier Schottky diodes in 6H-SiC,” Solid State Electron., vol. 42, no. 9, pp. 1757–1759, 1998. [11]F. Dahlquist, J.-O. Svedberg, C.-M. Zetterling, M. Ostling, B. Breitholtz, and H. Lendenmann, “A 2.8 kV, forward drop JBS diode with low leakage,” Mater. Sci. Forum, vol. 338–342, pp. 1179–1182, 2000. [12]Brett A. Hull, Joseph J. Sumakeris, Michael J. O’Loughlin, Qingchun Zhang, Jim Richmond, Adrian R. Powell,” Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers,” IEEE Trans. Electron Devices, VOL. 55, NO. 8, AUGUST 2008. [13]K. J. Schoen, J. P. Henning, J. M. Woodall, J. A. Cooper Jr., and M. R. Melloch, “A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H-SiC,” Mat. Sci. Forum, 264-268, 945, 1998. [14]Mehrotra M and Baliga BJ. “The trench MOS barrier Schottky rectifier,” IEEE Inter. Electron Device Meeting Digest, p675, 1993. [15]Yasuyuki Kawada, Takeshi Tawara, Shun-ichi Nakamura, Tae Tamori, and Noriyuki Iwamuro, “Shape Control and Roughness Reduction of SiC Trenches,” Japanese Journal of Applied Physics 48, 2009. [16]Srikanth Mahalingam, B. Jayant Baliga,” The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier,” Solid-State Electronics 43, 1999. [17]Mehrotra M, Baliga BJ. “Trench MOS barrier Schottky rectifier,” Solid State Electron., Vol. 38, No. 4, pp. 801-806, 1995. [18]Baliga BJ, “Trends in power semiconductor devices,” IEEE Trans. Electron Devices, Vol.43, p.1717, 1996. [19]Shimizu T, Kunori S, Kitada M, Sugai A. “100V trench MOS barrier Schottky rectifier using thick oxide layer,” Int. Symp. on Power Semiconductor Devices and ICs, p.243, 2001. [20]V. Heera, D. Panknin, W. Skorupa, “p-Type doping of SiC by high dose Al implantation—problems and progress,” Applied Surface Science, Volume 184, Issues 1-4, 2001. [21]Tomohisa Kato, Akimasa Kinoshita, Keisuke Wada, Takashi Nishi,Eiji Hozomi, Hiroyoshi Taniguchi, Kenji Fukuda and Hajime Okumura,” Morphology improvement of step bunching on 4H-SiC wafers by polishing technique,” Materials Science Forum Vols. 645-648, pp 763-765 , 2010. [22]A. Koh, A. Kestle, C. Wright, S. P. Wilks, P. A. Mawby, and W. R. Bowen, "Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide", Appl. Surface Sci., vol. 174, pp.210 -216, 2001. [23]Akimasa Kinoshita,Takashi Nishi,Tsutomu Yatsuo and Kenji Fukuda,” Improvement of SBD Electronic Characteristics Using SacrificialOxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing,” Mat. Sci. Forum, Vols. 556-557, pp 877-880, 2007. [24]O.J. Guy, D. Doneddu, L. Chen, M.R. Jennings, “Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy,” Diamond & Related Materials, Vols. 15, pp 1472–1477, 2006. [25]Dieter K. Schroder, Semiconductor Material and Device Characterization, 3rd Edition, Willey & Sons, INC. Publication. [26]Z. C. Fang, SiC Power Materials Device and Applications, Springer, 2004. [27]A. Kinoshita, T .Ohyanagi, T. Yatsuo, K. Fukuda,” Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) junction barrier Schottky diodes with almost same Schottky barrier height,” Mat. Sci. Forum, Volumes 645-648, 2010. [28]A. Kinoshita, T. Nishi, T. Ohyanagi, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai, “Electrical characteristics of Ti/4H-SiC silicidation Schottky barrier diode,” Mat. Sci. Forum, Volumes 600 – 603, 2009. [29]D. Perrone, M. Naretto, S. Ferrero, L. Scaltrito, C. F. Pirri,” 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts,” Mat. Sci. Forum, Volumes 615 – 617, 2009. [30]E. Bucher, S. Schulz, M. C. Lux-Steiner and P. Munz, "Work function and barrier heights of transition metal silicides," Appl. Phys. A, vol. 40, pp.71-77, 1986. [31]L. Zhu , T. P. Chow , K. A. Jones and A. Agarwal, "Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers,” IEEE Trans. Electron Devices, vol. 53 pp. 363, 2006.; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/67747Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/67747Test

المؤلفون: Cheng, Kai-Wen, 鄭凱文

المساهمون: 陳志成, Chen, Jyh-Cheng

مصطلحات موضوعية: 群撥, 中繼網路, 排程演算法, 可調性視訊編碼, 全球互通微波存取

الوقت: 2

العلاقة: [1] C. Perkins, “IP mobility support for IPv4.” IETF RFC 3344, Aug. 2002. [2] D. Johnson, C. Perkins, and J. Arkko, “Mobility support in IPv6.” IETF RFC 3775, June 2004. [3] T. G., Harrison, C. L. Williamson, W. L. Mackrell, and R. B. Bunt, “Mobile multicast (MoM) protocol: multicast support for mobile hosts,” in Proc. of ACM/IEEE Inter- national Conference on Mobile Computing and Networking (MobiCom), (Budapest, Hungary), pp. 151–160, July 1997. [4] C. R. Lin and K.-M.Wang, “Scalable multicast protocol in IP-based mobile networks,”ACM Wireless Networks, vol. 8, pp. 27–36, Jan. 2002. [5] C. L. Tan and S. Pink, “Mobicast: a multicast scheme for wireless networks,” ACM Mobile Networks and Applications, vol. 5, pp. 259–271, Dec. 2000. [6] A. Nosratinia and A. Hedayat, “Cooperative communication in wireless networks,”IEEE Commun. Mag., vol. 42, pp. 74–80, Oct. 2004. [7] “Air interface for fixed broadband wireless access systems.” IEEE Std 802.16-2009, May 2009. 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الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/60510Test

المؤلفون: 鄭凱鴻, Cheng, Kai-Hung

المساهمون: 王偉中, Wang, Wei-Chung

مصطلحات موضوعية: Zygo干涉儀, 薄膜, 殘留應力, 表面形貌, Zernike多項式

الوقت: 28

وصف الملف: 155 bytes; text/html

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الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/33890Test

المؤلفون: 鄭凱元, Cheng Kai-Yuan

المساهمون: 趙之振, Chiu Chi-Chun

مصطلحات موضوعية: 心理內容, 內容外在論, 自我知識, 先驗知識, 認知權利, 記憶, mental content, content externalism, self-knowledge, a priori knowledge, cognitive entitlement, memory

الوقت: 17

وصف الملف: 155 bytes; text/html

العلاقة: 參考文獻 方萬全(2001)，〈第一身權威與詮釋策略〉，《分析哲學—回顧與反省》，成都：四川教育出版社，2001年12月，一版一刷，頁533-556。 Bilgrami, A. (1992), ‘Can Externalism Be Reconciled With Self-Knowledge?’, The Twin Earth Chronicles: Twenty Years of Reflection on Hilary Putnam’s “The Meaning of ‘Meaning’”, ed. by Andrew Pessin and Sanford Goldberg. Armonk, N.Y.: M.E. Sharpe. Boghossian, P. (1989), ‘Content and Self-Knowledge’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Burge, T. (1977), ‘Belief De Re’, The Journal of Philosophy, Vol. 74, No. 6. (Jun., 1977), pp. 338-362. Stable URL: http://links.jstor.org/sici?sici=0022-362X%28197706%2974%3A6%3C338%3ABDR%3E2.0.CO%3B2-JTest ——(1979), ‘Individualism and the Mental’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1982), ‘Other Bodies’, The Twin Earth Chronicles: Twenty Years of Reflection on Hilary Putnam’s “The Meaning of ‘Meaning’”, ed. by Andrew Pessin and Sanford Goldberg. Armonk, N.Y.: M.E. Sharpe. ——(1988), ‘Individualism and Self-Knowledge’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1993), ‘Content Preservation’,The Philosophical Review, Vol. 102, No. 4. (Oct., 1993), pp. 457-488. Stable URL: http://links.jstor.org/sici?sici=0031-8108%28199310%29102%3A4%3C457%3ACP%3E2.0.CO%3B2-6Test ——(1996), ‘Our Entitlement to Self-Knowledge’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1998), ‘Memory and Self-Knowledge’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Brian McLaughlin and Michael Tye (1998), “The Brown-McKinsey Charge of Inconsistency”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Brown, J. (1995), “The Incompatibility of Anti-Individualism and Privileged Access”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Brueckner, A. (1992), “What an Anti-Individualist Knows A Priori”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1997) , “Externalism and Memory”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Davidson, D. (1984), ‘First Person Authority’, Subjective, Intersubjective, Objective. Oxford: Clarendon Press. ——(1987), ‘Knowing Our Own Mind’, Subjective, Intersubjective, Objective. Oxford: Clarendon Press. ——(1990), ‘Epistemology Externalized’, Subjective, Intersubjective, Objective. Oxford: Clarendon Press. Heil, J. (1988), ‘Privileged Access’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Kripke, S. (1980), Naming and Necessity, Cambridge, Mass.: Harvard University Press. Ludlow P. (1995), “Externalism, Self-Knowledge and the Prevalence of Slow-Switching”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1995), “Social Externalism, Self-Knowledge, and Memory” , Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1996), “Externalism and Memory: A Problem?”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1997), “On the Relevance of Slow Switching”, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. McKinsey, M. (1991), ‘Anti-Individualism and Privileged Access’, Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. Putnam, H. (1975), ‘The Meaning of ‘Meaning’’, The Twin Earth Chronicles: Twenty Years of Reflection on Hilary Putnam’s “The Meaning of ‘Meaning’”, ed. by Andrew Pessin and Sanford Goldberg. Armonk, N.Y.: M.E. Sharpe. Warfield, T. A. (1992), “Privileged Self-Knowledge and Externalism are Compatible” , Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications. ——(1997), “Externalism, Self-Knowledge and the Irrelevance of Slow-Switching” , Externalism and Self-Knowledge, ed. by Peter Ludlow and Norah Martin. Stanford, California: CSLI Publications.; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/27191Test

الإتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/27191Test