التفاصيل البيبلوغرافية
العنوان: |
Low Temperature Wafer Bonding by Spin-On-Glass |
المؤلفون: |
H. C. Lin, K. L. Chang, G. Pickrell, K. C. Hsieh, K. Y. Cheng |
المساهمون: |
鄭克勇 |
بيانات النشر: |
American Vacuum Society |
سنة النشر: |
2002 |
المجموعة: |
National Tsing Hua University Institutional Repository (NTHUR) |
مصطلحات موضوعية: |
gallium arsenide, indium compounds, III-V semiconductors, wafer bonding, glass, spin coating, transmission electron microscopy, interface roughness, surface emitting lasers, distributed Bragg reflector lasers, optical fabrication, silicon, elemental semiconductors |
الوقت: |
45 |
الوصف: |
2030161010039 ; 電機工程學系 ; We report the development of a low temperature (∼400 °C) and low pressure (∼0.5 kg/cm2) spin-on-glass (SOG) wafer bonding technique that can bond compound semiconductors and silicon without using chemical-mechanical polishing, surface etching or other intermediate materials in the bonding process. The relation of bonding quality and applied bonding pressure was studied. Cross sectional transmission electron microscopy analysis shows that the bonding interface is smooth, uniform and did not generate dislocations. Using this SOG bonding method, simulated vertical-cavity surface-emitting laser (VCSEL) structures that consist of GaInAs and InP cavities sandwiched by Al–oxide/Si distributed Bragg reflectors (DBRs) were successfully bonded to a silicon substrate with the bonding interface located outside the bottom DBR away from the VCSEL cavity. |
نوع الوثيقة: |
journal/newspaper |
اللغة: |
English |
تدمد: |
1071-1023 |
العلاقة: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, American Vacuum Society, Volume 20, Issue 2, Mar 2002, Pages 752-754; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71928Test |
الإتاحة: |
http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71928Test |
رقم الانضمام: |
edsbas.DA70EF4E |
قاعدة البيانات: |
BASE |