التفاصيل البيبلوغرافية
| العنوان: |
Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector |
| المؤلفون: |
D. E. Wholert, H. C. Lin, K. L. Chang, G. W. Pickrell, J. H. Epple, K. C. Hsieh, K. Y. Cheng |
| المساهمون: |
鄭克勇 |
| بيانات النشر: |
American Institute of Physics |
| سنة النشر: |
1999 |
| المجموعة: |
National Tsing Hua University Institutional Repository (NTHUR) |
| مصطلحات موضوعية: |
gallium arsenide, aluminium compounds, integrated optics, optical fabrication, laser mirrors, distributed Bragg reflector lasers, molecular beam epitaxial growth, semiconductor growth, oxidation, reflectivity, Auger electron spectra, III-V semiconductors, GALLIUM ARSENIDES, BRAGG REFLECTION, MOLECULAR BEAM EPITAXY, AUGER ELECTRON SPECTROSCOPY, TRANSMISSION ELECTRON MICROSCOPY, SEMICONDUCTOR LASERS, ALUMINIUM OXIDES, CHEMICAL COMPOSITION |
| الوقت: |
45 |
| الوصف: |
2030161010064 ; 電機工程學系 ; We propose a method for forming a top distributed Bragg reflector (DBR) during very-low temperature (VLT) molecular-beam epitaxy (MBE) growth that is independent of the substrate being used. By varying the arsenic overpressure during VLT MBE, it was determined by Auger electron spectroscopy and cross-section transmission electron microscopy that alternating layers of polycrystalline GaAs and amorphous (Al,As) can be deposited. Because these layers are not single crystal, they can be grown on any host lattice. After lateral wet oxidation, the polycrystalline GaAs does not undergo any significant changes; whereas the amorphous (Al,As) becomes an amorphous aluminum oxide. An index step of Δn = 1.88 is realized between these two layers which makes it possible to fabricate a high efficiency DBR with very few polycrystal-GaAs/amorphous-Al-oxide pairs on GaAs-, GaP-, or InP-based materials. Using reflectivity measurements, we demonstrate a five pair GaAs/AlAs-based DBR grown on an InP substrate that reflects wavelengths between 1.4 and 2.3 μm up to 95%. |
| نوع الوثيقة: |
journal/newspaper |
| اللغة: |
English |
| تدمد: |
0003-6951 |
| العلاقة: |
Applied Physics Letters, American Institute of Physics, Volume 75, Issue 10, Sep 1999, Pages 1371 - 1373; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72050Test |
| الإتاحة: |
http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72050Test |
| رقم الانضمام: |
edsbas.868E65DA |
| قاعدة البيانات: |
BASE |
