التفاصيل البيبلوغرافية
| العنوان: |
Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors |
| المؤلفون: |
Yang,Chi-Da, Ho,Chong-Long, Wu,Ming-Yuan, Su,Juh-Yuh, Ho,Wen-Jeng, Wu,Meng-Chyi |
| المساهمون: |
吳孟奇 |
| بيانات النشر: |
Elsevier |
| سنة النشر: |
2003 |
| المجموعة: |
National Tsing Hua University Institutional Repository (NTHUR) |
| مصطلحات موضوعية: |
Distributed bragg reflector, Epitaxial lift-off, InGaAs p–i–n photodiode |
| الوقت: |
101 |
| الوصف: |
電機工程學系 ; © 2003 Elsevier - We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 μm. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown on the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique. |
| نوع الوثيقة: |
journal/newspaper |
| وصف الملف: |
110 bytes; application/octet-stream |
| اللغة: |
English |
| تدمد: |
0038-1101 |
| العلاقة: |
Solid-State Electronics,Volume 47, Issue 10, October 2003, Pages 1763-1767; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41952Test |
| الإتاحة: |
http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41952Test |
| رقم الانضمام: |
edsbas.3244EA47 |
| قاعدة البيانات: |
BASE |
