التفاصيل البيبلوغرافية
| العنوان: |
Ga/1-x/Al/x/As LED structures grown on GaP substrates. |
| المؤلفون: |
Woodall, J. M., Potemski, R. M., Blum, S. E., Lynch, R. |
| المصدر: |
Other Sources |
| سنة النشر: |
1972 |
| المجموعة: |
NASA Technical Reports Server (NTRS) |
| جغرافية الموضوع: |
Unclassified, Unlimited, Publicly available |
| الوقت: |
26 |
| الوصف: |
Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
unknown |
| العلاقة: |
http://ntrs.nasa.gov/search.jsp?R=19720047715Test; Accession ID: 72A31381 |
| الإتاحة: |
http://ntrs.nasa.gov/search.jsp?R=19720047715Test |
| حقوق: |
Copyright |
| رقم الانضمام: |
edsbas.EA803BA8 |
| قاعدة البيانات: |
BASE |
