دورية أكاديمية

A Non-Volatile Memory Based on NbOx/NbSe2 Van der Waals Heterostructures

التفاصيل البيبلوغرافية
العنوان: A Non-Volatile Memory Based on NbOx/NbSe2 Van der Waals Heterostructures
المؤلفون: Ji Eun Kim, Van Tu Vu, Thi Thanh Huong Vu, Thanh Luan Phan, Young Rae Kim, Won Tae Kang, Kunnyun Kim, Young Hee Lee, Woo Jong Yu
المصدر: Applied Sciences; Volume 10; Issue 21; Pages: 7598
بيانات النشر: Multidisciplinary Digital Publishing Institute
سنة النشر: 2020
المجموعة: MDPI Open Access Publishing
مصطلحات موضوعية: 2D nanomaterials, chemical vapor depositions, memristor
جغرافية الموضوع: agris
الوصف: Two-dimensional (2D) van der Waals (vdW) layered transition metal dichalcogenides (TMDs) materials have been receiving a huge interest due to atomically thin thickness, excellent optoelectronic properties, and free dangling bonds. Especially the metallic TMDs, such as MoTe2 (1T’ phase), NbS2, or NbSe2, have shown fascinating physical properties through various applications, such as superconductor and charge density wave. However, carrier transport of metallic TMDs would be degraded due to the poor stability in ambient conditions. To date, achieving both high device performance and long-term stability is still a huge challenge. Thus, an alternative way to develop both unavoidable native oxide and metallic TMDs is under consideration for new era research. In this respect, 2D metallic TMD materials have attracted high attention due to their great potential in neuromorphic-based devices with metal-insulator-metal structures, making it possible to produce scalable, flexible, and transparent memory devices. Herein, we experimentally demonstrated a synthesized metallic NbSe2 by a chemical vapor deposition method with a highly uniform, good shape distribution and layer controller ranging from 2–10 layers. Together, for the first time, we proposed the NbOx/NbSe2 heterostructure memristor device based on the native NbOx oxide on the interface of multi-layer NbSe2 flakes. The ultra-thin native NbOx oxide of 3 nm was formed after a period of oxidation time under air condition, which acts as a memristive surface in the Au-NbOx-Au lateral memristor device, in which oxygen vacancies form a conductive filament. Our NbOx/NbSe2 hetero-tructured memristor exhibits a stable memory window, a low-resistance-state/high-resistance-state ratio of 20, and stable endurance properties over 20 cycles at a low working voltage of 1 V. Furthermore, by the retention property test, non-volatile characteristics were confirmed after over 3000 s in our best data. Through a systematic study of the NbOx/NbSe2 heterostructured memristor device, this ...
نوع الوثيقة: text
وصف الملف: application/pdf
اللغة: English
العلاقة: Nanotechnology and Applied Nanosciences; https://dx.doi.org/10.3390/app10217598Test
DOI: 10.3390/app10217598
الإتاحة: https://doi.org/10.3390/app10217598Test
حقوق: https://creativecommons.org/licenses/by/4.0Test/
رقم الانضمام: edsbas.E88940B4
قاعدة البيانات: BASE