دورية أكاديمية

Recent advances in the development of semiconductor detectors for very high luminosity colliders

التفاصيل البيبلوغرافية
العنوان: Recent advances in the development of semiconductor detectors for very high luminosity colliders
المؤلفون: Hartmann, Frank, Gaubas, Eugenijus, Kadys, Arūnas, Kažukauskas, Vaidotas, Sakalauskas, Stanislavas, Storasta, Jurgis, Vaitkus, Juozas Vidmantis
المصدر: Nuclear instruments & methods in physics research. Section A - Accelerators, spectrometers, detectors and associated equipment, Amsterdam : Elsevier Science, 2010, vol. 617, iss. 1-3, p. 543-545 ; ISSN 0168-9002
سنة النشر: 2010
المجموعة: LSRC VL (Lithuanian Social Research Centre Virtual Library) / LSTC VB (Lietuvos socialinių tyrimų centras virtualią biblioteką)
مصطلحات موضوعية: Silicon sensors, Tracking detectors, Radiation hardness, SLHC, RD50
الوصف: For the luminosity upgrade of the LHC, the SLHC, the tracking systems of the LHC experiments need to be replaced. A main concern is the extreme radiation hardness requirement up to 1x10(16)cm(-2) 1 MeV neutron equivalent. This paper describes an extract of recent results on radiation hardening technologies developed within the RD50 Collaboration (http://www.cern.ch/rd50Test) [1] for the tracker upgrades. Silicon detectors have been designed and produced on n- and p-type wafers made by Float Zone, epitaxy and Czochralski technology. Their charge collection efficiency after proton, neutron and mixed irradiation has been studied. Novel detector concepts, as 3D detectors, have been designed, produced and studied as well. Radiation induced microscopic disorder has been also investigated and correlated with the performance degradation of irradiated detectors.
نوع الوثيقة: article in journal/newspaper
اللغة: English
العلاقة: http://vu.lvb.lt/VU:ELABAPDB4278201&prefLang=en_USTest
الإتاحة: https://doi.org/10.1016/j.nima.2009.10.028Test
http://vu.lvb.lt/VU:ELABAPDB4278201&prefLang=en_USTest
رقم الانضمام: edsbas.D6DAEF82
قاعدة البيانات: BASE