دورية أكاديمية

Improving the Irradiance Data Measured by Silicon-Based Sensors

التفاصيل البيبلوغرافية
العنوان: Improving the Irradiance Data Measured by Silicon-Based Sensors
المؤلفون: Mubarak, Riyad, Schilke, Holger, Seckmeyer, Gunther
المصدر: Energies : open-access journal of related scientific research, technology development and studies in policy and management 14 (2021), Nr. 10
بيانات النشر: MDPI
سنة النشر: 2021
المجموعة: Institutional Repository of Leibniz Universität Hannover
مصطلحات موضوعية: incident solar radiation, pyranometer, silicon sensors, solar reference cell, ddc:620
الوصف: Silicon-based sensors are widely used for monitoring solar irradiance, in particular, in the field of Photovoltaic (PV) applications. We present a method to correct the global horizontal irradiance measured by silicon-based sensors that reduces the difference to the standard thermopile sensor measurements. A major motivation to use silicon-based sensors for the measurements of irradiance is their lower cost. In addition, their response time is much lower, and their spectral response is much closer to that of the PV systems. The analysis of the differences is based on evaluating four parameters that influence the sensor measurements, namely the temperature, cosine error, spectral mismatch, and calibration factor. Based on the analysis, a correction model is applied to the silicon sensors measurements. The model separates measurements under a clear sky and cloudy sky by combining the clearness index and the solar zenith angle. By applying the correction model on the measurements of the silicon-based sensor, the differences between sensor readings have been reduced significantly. The relative root mean squared difference (rRMSD) between the daily solar irradiation measured by both sensors decreased from 10.6% to 5.4% after applying the correction model, while relative mean absolute difference (rMAD) decreased from 7.4% to 2.5%. The difference in total annual irradiation decreased from 70 KWh/m2 (6.5%) to 15 kWh/m2 (1.5%) by the correction. The presented correction method shows promising results for a further improvement in the accuracy of silicon-based sensors.
نوع الوثيقة: article in journal/newspaper
اللغة: English
العلاقة: ESSN:1996-1073; http://dx.doi.org/10.15488/11216Test; https://www.repo.uni-hannover.de/handle/123456789/11302Test
DOI: 10.15488/11216
الإتاحة: https://doi.org/10.15488/11216Test
https://doi.org/10.3390/en14102766Test
https://www.repo.uni-hannover.de/handle/123456789/11302Test
حقوق: CC BY 4.0 Unported ; https://creativecommons.org/licenses/by/4.0Test/ ; frei zugänglich
رقم الانضمام: edsbas.CC9C6060
قاعدة البيانات: BASE