المؤلفون: Alialy, Sahar, Yıldız, Dilber Esra, Altındal, Şemsettin

المساهمون: Hitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü, orcid:0000-0003-2212-199X

مصطلحات موضوعية: Au/TiO2/n-4H-SiC SBDs, Frenkel-Poole, Leakage Current-Voltage (IR-VR) Characteristics, Schottky Emission, Temperature Dependent

العلاقة: Journal of Nanoelectronics and Optoelectronics; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; Alialy, S., Yıldız, D. E., Altındal, Ş. (2016). Study on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. Journal of Nanoelectronics and Optoelectronics, 11(5), 626-630.; https://doi.org/10.1166/jno.2016.1942Test; https://hdl.handle.net/11491/2041Test; 11; 626; 630

الإتاحة: https://doi.org/10.1166/jno.2016.1942Test
https://hdl.handle.net/11491/2041Test

المؤلفون: Çetinkaya, Hayriye Gökçen, Yıldız, Dilber Esra, Altındal, Şemsettin

المساهمون: Hitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü, orcid:0000-0003-2212-199X

مصطلحات موضوعية: Comparison of Au/n-4H-SiC (MS) and Au/TiO 2 /n-4H-SiC (MIS) Type SBDs, I-V, C-V and G/w-V Measurements in Dark and uUder Illumination, Negative Capacitance

العلاقة: International Journal of Modern Physics B; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; Çetinkaya, H. G., Yıldız, D. E., Altındal, Ş. (2015). On the negative capacitance behavior in the forward bias of Au/n–4 H–SiC (MS) and comparison between MS and Au/TiO 2/n–4 H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity. International Journal of Modern Physics B, 29(1), 1450237.; https://doi.org/10.1142/S0217979214502373Test; https://hdl.handle.net/11491/764Test; 29

الإتاحة: https://doi.org/10.1142/S0217979214502373Test
https://hdl.handle.net/11491/764Test

المؤلفون: Yıldız, Dilber Esra, Altındal, Şemsettin, Tekeli Z., Özer, Mehmet

المساهمون: Hitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü, orcid:0000-0003-2212-199X

مصطلحات موضوعية: Au/SnO2/n-Si and Al/SnO2/p-Si SBDs, I-V-T Characteristics, Insulator Layer, Series Resistance, Surface States

العلاقة: Materials Science in Semiconductor Processing; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; Yıldız, D. E., Altındal, Ş., Tekeli, Z., Özer, M. (2010). The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes. Materials Science in Semiconductor Processing, 13(1), 34-40.; https://doi.org/10.1016/j.mssp.2010.02.004Test; https://hdl.handle.net/11491/1525Test; 13; 34; 40

الإتاحة: https://doi.org/10.1016/j.mssp.2010.02.004Test
https://hdl.handle.net/11491/1525Test