المؤلفون: Dalla Betta, Gian-Franco, Boscardin, Maurizio, Bomben, Marco, Brianzi, Mirko, Calderini, Giovanni, Darbo, Giovanni, Dell'Orso, Roberto, Gaudiello, Andrea, Giacomini, Gabriele, Mendicino, Roberto, Meschini, Marco, Messineo, Alberto, Ronchin, Sabina, Sultan, D.M.S., Zorzi, Nicola

المساهمون: Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)

المصدر: Nucl.Instrum.Meth.A ; 13th Pisa Meeting on Advanced Detectors ; https://hal.science/hal-03617740Test ; 13th Pisa Meeting on Advanced Detectors, May 2015, La Biodola, Italy. pp.388-391, ⟨10.1016/j.nima.2015.08.074⟩

مصطلحات موضوعية: High Luminosity LHC, 3D silicon sensors, Active edges, Fabrication technology, activity report, semiconductor detector: pixel, fabrication: technology, radiation: damage, ATLAS, CMS, semiconductor detector: design, semiconductor detector: technology, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]

جغرافية الموضوع: La Biodola, Italy

العلاقة: info:eu-repo/semantics/altIdentifier/arxiv/1612.00626; hal-03617740; https://hal.science/hal-03617740Test; ARXIV: 1612.00626; INSPIRE: 1457984

الإتاحة: https://doi.org/10.1016/j.nima.2015.08.074Test
https://hal.science/hal-03617740Test

المؤلفون: Gkougkousis, Evangelos-Leonidas

المساهمون: Laboratoire de l'Accélérateur Linéaire (LAL), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2014 IEEE Nuclear Science Symposium and Medical Imaging Conference and 21st Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors
https://hal.science/hal-03622689Test
2014 IEEE Nuclear Science Symposium and Medical Imaging Conference and 21st Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Nov 2014, Seattle, United States. pp.7431067, ⟨10.1109/NSSMIC.2014.7431067⟩

مصطلحات موضوعية: Semiconductor process modeling, Silicon, Detectors, Radiation effects, Semiconductor device modeling, Large Hadron Collider, technology CAD (electronics), data acquisition, doping profiles, metallisation, secondary ion mass spectroscopy, silicon radiation detectors, Si, ATLAS Upgrade Planar Pixel Sensors R&, D Project, planar pixel sensors collaboration, 3D TCAD doping profile simulations, underbump metallisation effects, hybridization, data acquisition systems, silicon particle detectors, ATLAS, LHC, silicon sensors, planar pixels, radiation hard detectors, activity report, radiation: damage, semiconductor detector: pixel, semiconductor detector: technology

جغرافية الموضوع: Seattle, United States

العلاقة: hal-03622689; https://hal.science/hal-03622689Test; INSPIRE: 1498721

الإتاحة: https://doi.org/10.1109/NSSMIC.2014.7431067Test
https://hal.science/hal-03622689Test