التفاصيل البيبلوغرافية
العنوان: |
Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer |
المؤلفون: |
Guo, Xiao, Tang, Yang, Jiang, Yu-Long, Qu, Xin-Ping, Ru, Guo-Ping, Zhang, David Wei, Deduytsche, Davy, Detavernier, Christophe |
المصدر: |
MICROELECTRONIC ENGINEERING ; ISSN: 0167-9317 |
سنة النشر: |
2013 |
المجموعة: |
Ghent University Academic Bibliography |
مصطلحات موضوعية: |
Physics and Astronomy, SI, SB, Antimony interlayer, Si(110) substrate, SBH modulation, SILICON, SOLID-PHASE EPITAXY, DIFFUSION |
نوع الوثيقة: |
article in journal/newspaper |
وصف الملف: |
application/pdf |
اللغة: |
English |
العلاقة: |
https://biblio.ugent.be/publication/4357511Test; http://hdl.handle.net/1854/LU-4357511Test; http://dx.doi.org/10.1016/j.mee.2013.01.006Test; https://biblio.ugent.be/publication/4357511/file/4357530Test |
DOI: |
10.1016/j.mee.2013.01.006 |
الإتاحة: |
https://doi.org/10.1016/j.mee.2013.01.006Test https://biblio.ugent.be/publication/4357511Test http://hdl.handle.net/1854/LU-4357511Test https://biblio.ugent.be/publication/4357511/file/4357530Test |
حقوق: |
No license (in copyright) ; info:eu-repo/semantics/restrictedAccess |
رقم الانضمام: |
edsbas.1F5D7268 |
قاعدة البيانات: |
BASE |