التفاصيل البيبلوغرافية
| العنوان: |
Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy |
| المؤلفون: |
Ayed, H., Béchir, L., Benabdesslem, M., Benslim, N., Mahdjoubi, L., Mohammed-Brahim, T., Hafdallah, A., Aida, M.S. |
| بيانات النشر: |
Sumy State University |
| سنة النشر: |
2016 |
| المجموعة: |
eSSUIR - Electronic Sumy State University Institutional Repository / Сумський державний університет |
| مصطلحات موضوعية: |
Schottky Diodes, Characterisation, Polycrystalline silicon, Admittance Spectroscopy |
| الوصف: |
In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance – Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon. |
| نوع الوثيقة: |
article in journal/newspaper |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| العلاقة: |
H. Ayed, L. Béchir, et al., J. Nano- Electron. Phys. 8 No 1, 01038 (2016); http://essuir.sumdu.edu.ua/handle/123456789/44874Test |
| الإتاحة: |
http://essuir.sumdu.edu.ua/handle/123456789/44874Test |
| رقم الانضمام: |
edsbas.A47C4875 |
| قاعدة البيانات: |
BASE |
