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1دورية أكاديمية
المؤلفون: Raghunathan, Vivek, Ye, Winnie N., Hu, Juejun, Izuhara, Tomoyuki, Michel, Jurgen, Kimerling, Lionel C.
المساهمون: Massachusetts Institute of Technology. Materials Processing Center, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Massachusetts Institute of Technology. Microphotonics Center, Raghunathan, Vivek, Hu, Juejun, Michel, Jurgen, Kimerling, Lionel C.
المصدر: Vivek Raghunathan
مصطلحات موضوعية: Integrated Optics
وصف الملف: application/pdf
العلاقة: http://dx.doi.org/10.1364/OE.18.017631Test; Optics Express; http://hdl.handle.net/1721.1/58117Test; Vivek Raghunathan, Winnie N. Ye, Juejun Hu, Tomoyuki Izuhara, Jurgen Michel, and Lionel Kimerling, "Athermal operation of Silicon waveguides: spectral, second order and footprint dependencies," Opt. Express 18, 17631-17639 (2010); orcid:0000-0002-7233-3918; orcid:0000-0002-3913-6189
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2دورية أكاديمية
المؤلفون: Sun, Xiaochen, Liu, Jifeng, Michel, Jurgen, Kimerling, Lionel C
المساهمون: Massachusetts Institute of Technology. Materials Processing Center, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Massachusetts Institute of Technology. Microphotonics Center, Kimerling, Lionel C., Michel, Jurgen, Liu, Jifeng, Sun, Xiaochen
المصدر: Xiaochen Sun
مصطلحات موضوعية: Integrated Optics
وصف الملف: application/pdf
العلاقة: http://dx.doi.org/10.1364/OL.34.001198Test; Optics Letters; http://hdl.handle.net/1721.1/49437Test; Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel, "Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes," Opt. Lett. 34, 1198-1200 (2009) http://www.opticsinfobase.org/abstract.cfm?URI=ol-34-8-1198Test; orcid:0000-0002-3913-6189
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3دورية أكاديمية
المؤلفون: Kimerling, Lionel C., Hu, Juejun, Carlie, Nathan, Petit, Laeticia, Agarwal, Anuradha Murthy
المساهمون: MIT Materials Research Laboratory, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Kimerling, Lionel C., Hu, Juejun, Agarwal, Anuradha Murthy
المصدر: IEEE
مصطلحات موضوعية: sulfur compounds, optical resonators, microresonators, integrated optics, IR spectroscopy, glass, chemical analysis, Amorphous materials
وصف الملف: application/pdf
العلاقة: http://dx.doi.org/10.1109/jlt.2009.2030899Test; Journal of Lightware Technology; INSPEC Accession Number: 10916411; http://hdl.handle.net/1721.1/59387Test; Juejun Hu et al. “Cavity-Enhanced IR Absorption in Planar Chalcogenide Glass Microdisk Resonators: Experiment and Analysis.” Lightwave Technology, Journal of 27.23 (2009): 5240-5245. © Copyright 2009 IEEE; orcid:0000-0002-7233-3918; orcid:0000-0002-3913-6189
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4تقرير
المؤلفون: Fonstad, Clifton J., Jr., Ahadian, Joseph F., Royter, Yakov, Patterson, Steven G., Wang, Hao, Viadyananthan, Praveen T., Martin, Paul S., Aggarwal, Rajni J., Petrich, Gale S., Kolodziejski, Leslie A., Mikkelson, James M., Goodhue, William D., Fitzgerald, Eugene A., Bulsara, Mayank T., Hoshino, Isako, Tachikawa, Masami, Choy, Henry K., Ram, Rachna J., Livas, Jeffrey C., Hall, Katherine L., Prasad, Sheila, Shenoy, Krishna V., Warde, Cardinal, Luo, Jiafu, Psaltis, Demetri, Pan, Janet L., Crankshaw, Donald S., Kannam, P., Martin, R. J.
مصطلحات موضوعية: Compound Semiconductor Materials, Compound Semiconductor Devices, Epitaxy-on-Electronics Integration Technology, Monolithic Enhancement of MESFET Electronics with Resonant Tunneling Diodes, Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors, InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics, The OPTOCHIP Project, Other Multi-group OEIC Chips, Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Monolithic Integration of In-Plane, Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Metal-Semiconductor-Metal Photodetectors from a GaAs VLSI Process, Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips, Microwave Characterization of Optoelectronic Devices, Reduced-Temperature Growth of Distributed Bragg Relectors of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronics, Reduced-Temperature Growth of Monolithic Integration of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronics, Compact Integrated Optics Structures for Monolithic Integration, Integrated Normal Incidence Single-Band Quantum-Well Intersubband Photodetectors, Integrated Normal Incidence Dual-Band Quantum-Well Intersubband Photodetectors, Figures of Merit for Quantum-Well Intersubband Photodetector Focal-Plane Arrays in Different Operating Regimes
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1996; Solid State Physics, Electronics and Optics; Materials and Fabrication; Compound Semiconductor Materials and Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 139; RLE_PR_139_01_01s_01; http://hdl.handle.net/1721.1/57392Test
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5تقرير
المؤلفون: Fonstad, Clifton J., Jr., Ahadian, Joseph F., Royter, Yakov, Patterson, Steven G., Wang, Hao, Viadyananthan, Praveen T., Martin, Paul S., Aggarwal, Rajni J., Shenoy, Krishna V., Petrich, Gale S., Kolodziejski, Leslie A., Mikkelson, J. M., Fitzgerald, Eugene A., Bulsara, Mayank T., Tachikawa, Masami, Prasad, Sheila, Warde, Cardinal, Luo, Jiafu, Psaltis, Demetri, Goodhue, William D., Pan, Janet L., Kannam, P., Iisuka, Norio, Hoshino, Isako
مصطلحات موضوعية: Compound Semiconductor Materials, Compound Semiconductor Devices, Epitaxy-on-Electronics Integration Technology, High Peak-to-Valley Ratio Resonant Tunneling Diodes on GaAs Substrates, Monolithic Enhancement of MESFET Electronics with Resonant Tunneling Diodes, Integrated InGaAsP/GaAs Light Emitting Diodes and Surface-Emitting Laser Diodes, Integrated Photodetector Standard Cells, Microwave Characterization of Optoelectronic Devices, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Monolithic Integration of Self-Electrooptic-Effect Devices on Very Large Scale Integrated GaAs Electronics, Compact Integrated Optics Structures for Monolithic Integration, The OPTOCHIP Project, Other Multigroup OEIC Chips, Normal Incidence Single-Band Quantum-Well Intersubband Photodetectors, Normal Incidence Dual-Band Quantum-Well Intersubband Photodetectors, Integrated Quantum-Well Intersubband Photodetector Focal Plane Arrays, Intersubband Transitions in Narrow Quantum Wells, Kinetic Beam Etching of Semiconductor Nanostructures
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1995; Solid State Physics, Electronics and Optics; Materials and Fabrication; Compound Semiconductor Materials and Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 138; RLE_PR_138_01_01s_01; http://hdl.handle.net/1721.1/57353Test
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6تقرير
المؤلفون: Fonstad, Clifton J., Jr., Braun, Eric K., Shenoy, Krishna V., Mikkelson, J. M., Aggarwal, Rajni J., Ahadian, Joseph F., Petrich, Gale S., Kolodziejski, Leslie A., Grot, A. C., Psaltis, Demetri, Royter, Yakov, Wang, Hao, Martin, Paul S., Haus, Hermann A., Chen, Jerry C., Pan, Janet L., Peng, Lung-Han, Iisuka, Norio, Smet, Jurgen H., Hu, Qing, Prasad, Sheila, Hoshino, Isako
مصطلحات موضوعية: Heterostructures for High-Performance Devices, High-Temperature Stability of GaAs Integrated Circuits, High Peak-to-Valley Current Ratio Resonant-Tunneling Diodes on GaAs Substrates, Monolithic Integration of Resonant-Tunneling Diodes on GaAs Integrated Circuits, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETS, Monolithic Integration of LEDs and VLSI GaAs MESFET Circuits, Development of an Epi-on-Electronics OEIC Technology, Integrated Optics Circuits Based on Commercial GaAs Integrated Circuits, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Reactive Ion Etching of InGaAIAs Heterostructures, Reactive Ion Etching of InGaAsP Heterostructures, Tunable Semiconductor Lasers, Application of the Spectral Index Method to Laser Diode Design, Normal Incidence Quantum Well Infrared Photodetector, Fourteen-Band k * p Analysis of Intersubband Transitions in Conduction Band Quantum Wells, Intersubband Transitions in Ultra-Narrow Quantum Wells, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, High-Frequency/High-Speed Characterization of Optoelectronic Devices, High-Frequency/High-Speed Characterization of Integrated Circuits, In-Situ Supersonic Beam Etching of III-V Heterostructures
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High-Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137; RLE_PR_137_01_01s_01; http://hdl.handle.net/1721.1/57295Test
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7تقرير
المؤلفون: Haus, Hermann A., Ippen, Erich P., Fujimoto, James G., Hagelstein, Peter L., Basu, Santanu, Mecozzi, Antonio, Khatri, Farzana I., Moores, John D., Nelson, Lynn E., Doerr, Christopher R., Tamura, Kohichi R., Lai, Yinchieh, Bergman, Keren, Boivin, Luc, Bounds, Jeffrey K., Kärtner, Franz X., Lyubomirsky, Ilya, Shirasaki, Masataka, Damask, Jay N., Kolodziejski, Leslie A., Smith, Henry I., Petrich, Gale S., Wong, Vincent V., Fonstad, Clifton G., Martin, Paul S., Hall, Katherine L., Darwish, Ali M., Lenz, Gadi, Dougherty, David J., Hultgren, Charles T., Paye, Jeróme M., Hirayama, Yuzo, Cheng, Tak K., Fleischer, Siegfried B., Huang, David, Jacobson, Joseph M., Ramaswamy, Malini, Ulman, Morrison, Acioli, Lucio H., Izatt, Joseph A., Sun, Chi-Kuang, Vallee, Fabrice, Hee, Michael R., Lin, Charles P., Goodberlet, James G., Kaushik, Sumanth, Muendel, Martin H., Morgenthaler, Ann W., Pan, Janet L., Chaudhary, Irfan U., Hashimoto, Akikazu, Smullin, Louis D., Farber, D., Zheng, Q.
مصطلحات موضوعية: Optics, Quantum Electronics, Additive Pulse Modelocking, Fiber Ring Laser, Long Distance Fiber Communications, Squeezing, Integrated Optics Components, Channel Dropping Filter, Tunable Semiconductor Lasers, Nonlinear Properties of InGaAsP Optical Amplifiers, Ultrafast Index Nonlinearities in Active Waveguides, Femtosecond Pulse Generation in F-center Systems, Femtosecond Pulse Amplification in F-center Systems, Coherent Phonons In Electronic Materials, Femtosecond Studies of Fullerenes, Ultrashort Pulse Generation in Solid State Lasers, Ultrafast Phenomena in Materials, Time Domain Diagnostics of Waveguide Devices, Laser Medicine, Observation of Gain in Ni-like Nb, Pump Pulse Length, End-pump Xray Lasers, Kinetics of Laser-Generated Plasmas, Hydrodynamics of Laser-Generated Plasmas, Analytical Solution of the 2D Exciton-Phonon Matrix Element, Quantum Dot Diode Lasers, Coherent Fusion Theory, Deuterated Metal Experiments
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992; Solid State Physics, Electronics and Optics; Optics and Devices; Optics and Quantum Electronics; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135; RLE_PR_135_01_03s_01; http://hdl.handle.net/1721.1/57206Test
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8تقرير
المؤلفون: Haus, Hermann A., Ippen, Erich P., Fujimoto, James G., Hagelstein, Peter L., Acioli, Lucio H., Basu, Santanu, Gabetta, Guiseppe, Hirayama, Yuzo, Izatt, Joseph A., Kärtner, Franz X., Mecozzi, Antonio, Naganuma, Kazunori, Chen, Jerry C., Khatri, Farzana I., Moores, John D., Hon, Stephen Y., Huxley, Janice M., Nelson, Lynn E., Tamura, Kohichi R., Lai, Yinchieh, Bergman, Keren, Doerr, Christopher R., Shirasaki, Masataka, Damask, Jay N., Smith, Henry I., Wong, Vincent V., Fonstad, Clifton G., Martin, Paul S., Hall, Katherine L., Lenz, Gadi, Dougherty, David J., Hultgren, Charles T., Cheng, Tak K., Fleischer, Siegfried B., Jacobson, Joseph M., Huang, David, Ramaswamy, Malini, Ulman, Morrison, Chamon, Claudio D. C., Sun, Chi-Kuang, Lin, Charles P., Hee, Michael R., Muendel, Martin H., Bierbaum, Michele M., Goodberlet, James G., Braud, John Paul, Hung, Tsen-Yu, Morgenthaler, Ann W., Chuang, Isaac L., Kaushik, Sumanth, Chaudhary, Irfan U.
مصطلحات موضوعية: Optics, Quantum Electronics, Additive Pulse Modelocking, Ultrashort Pulse Fiber Laser, Long Distance Fiber Communications, Squeezing, Integrated Optics Components, Tunable Lasers, Gain Dynamics in Semiconductor Amplifiers, Ultrafast Optical Kerr Effect in Active Waveguides, Coherent Phonons in Electronic Materials, Femtosecond Studies of Superconductivity, Femtosecond Pulse Generation in Solid State Lasers, Ultrafast Phenomena in Optoelectronic Materials, Time Domain Diagnostics of Waveguide Devices, Laser Medicine, Laser Surgery, Overview of the EUV Laser Effort, Nd:glass Amplifier Development, Spectral Measurements of a Ni-like Mo Plasma, Progress in EUV Laser Kinetics Modeling, Laser Cavities in the Soft X-Ray Region, Boltzmann Equation Studies, Coherent Fusion Studies
وصف الملف: application/pdf
العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991; Solid State Physics, Electronics and Optics; Optics and Devices; Optics and Quantum Electronics; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134; RLE_PR_134_01_03s_01; http://hdl.handle.net/1721.1/57189Test
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9رسالة جامعية
المؤلفون: Wright, Peter Vickers
المساهمون: Hermann A. Haus., Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
مصطلحات موضوعية: Electrical Engineering and Computer Science, Coupled mode theory, Acoustic surface wave devices, Signal processing, Integrated optics
وصف الملف: 274 leaves; 5833842 bytes; 5833642 bytes; application/pdf
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