المؤلفون: Mayes, Anne M., Hobbs, L. W., Stellacci, Francesco

مصطلحات موضوعية: electron, electronic properties, magnetism, magentic properties, structure, crystal, lattice, energy, thermodynamics, differential scanning calorimetry (DSC), x-ray diffraction (XRD), scanning probe microscopy (AFM, STM), scanning electron microscopy (SEM), UV/Vis, Raman spectroscopy, FTIR spectroscopy, x-ray photoelectron spectroscopy (XPS), vibrating sample magnetometry (VSM), dynamic light scattering (DLS), phonon, quantum, quantum mechanics, radiation, battery, fuel cell, ferromagnetism, ferromagnetic, polymer, glass

جغرافية الموضوع: Fall 2005

وصف الملف: text/html

العلاقة: 3.014-Fall2005; local: 3.014; local: IMSCP-MD5-edee04be92ea4e9b0708363a0d703f68; http://hdl.handle.net/1721.1/41885Test

الإتاحة: http://hdl.handle.net/1721.1/41885Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Charged Centers in Si0₂-like Glasses

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1979; General Physics; Electronic Properties of Charged Centers in Si0₂-like Glasses; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 121; RLE_PR_121_XVI; http://hdl.handle.net/1721.1/56731Test

الإتاحة: http://hdl.handle.net/1721.1/56731Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Charged Centers in Si0₂-like Glasses

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1980; General Physics; Electronic Properties of Charged Centers in Si0₂-like Glasses; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 122; RLE_PR_122_XVII; http://hdl.handle.net/1721.1/56766Test

الإتاحة: http://hdl.handle.net/1721.1/56766Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1981; General Physics; Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 123; RLE_PR_123_XVII; http://hdl.handle.net/1721.1/56792Test

الإتاحة: http://hdl.handle.net/1721.1/56792Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Amorphous Silicon Dioxide

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1982; Electronic Properties of Amorphous Silicon Dioxide; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 124; RLE_PR_124_15; http://hdl.handle.net/1721.1/56830Test

الإتاحة: http://hdl.handle.net/1721.1/56830Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Amorphous Silicon Dioxide

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985; Electronic Properties of Amorphous Silicon Dioxide; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127; RLE_PR_127_10; http://hdl.handle.net/1721.1/56934Test

الإتاحة: http://hdl.handle.net/1721.1/56934Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Amorphous Silicon Dioxide

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1984; Electronic Properties of Amorphous Silicon Dioxide; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 126; RLE_PR_126_15; http://hdl.handle.net/1721.1/56893Test

الإتاحة: http://hdl.handle.net/1721.1/56893Test

المؤلفون: Kastner, Marc A.

مصطلحات موضوعية: Electronic Properties of Charged Centers in SiO₂-like Glasses

وصف الملف: application/pdf

العلاقة: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1978; General Physics; Electronic Properties of Charged Centers in SiO₂-like Glasses; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 120; RLE_PR_120_XVIII; http://hdl.handle.net/1721.1/56689Test

الإتاحة: http://hdl.handle.net/1721.1/56689Test