يعرض 1 - 4 نتائج من 4 نتيجة بحث عن '"Cheng, Kai"', وقت الاستعلام: 1.04s تنقيح النتائج
  1. 1
    دورية أكاديمية

    المساهمون: Massachusetts Institute of Technology. Microsystems Technology Laboratories

    المصدر: Other repository

    وصف الملف: application/octet-stream

    العلاقة: Technical Digest - International Electron Devices Meeting, IEDM; https://hdl.handle.net/1721.1/137036.2Test; Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S, Xiang, Peng et al. 2019. "First Demonstration of a Self-Aligned GaN p-FET." Technical Digest - International Electron Devices Meeting, IEDM, 2019-December.

  2. 2
    دورية أكاديمية

    المصدر: Other repository

    وصف الملف: application/pdf

    العلاقة: Technical Digest - International Electron Devices Meeting, IEDM; https://hdl.handle.net/1721.1/137036Test; Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S, Xiang, Peng et al. 2019. "First Demonstration of a Self-Aligned GaN p-FET." Technical Digest - International Electron Devices Meeting, IEDM, 2019-December.

  3. 3
    دورية أكاديمية

    المساهمون: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories

    المصدر: Pao-Chuan Shih

    وصف الملف: application/pdf

    العلاقة: 2020 Device Research Conference (DRC); https://hdl.handle.net/1721.1/141927Test; Shih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai et al. 2020. "GaN Nanowire Field Emitters with a Self-Aligned Gate Process." 2020 Device Research Conference (DRC).

  4. 4
    دورية أكاديمية

    المساهمون: Massachusetts Institute of Technology. Microsystems Technology Laboratories

    المصدر: Pao-Chuan Shih

    وصف الملف: application/pdf

    العلاقة: IEEE Electron Device Letters; https://hdl.handle.net/1721.1/141929Test; Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I. and Palacios, Tomas. 2021. "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process." IEEE Electron Device Letters, 42 (3).