دورية أكاديمية
Optical-quality controllable wet-chemical doping of graphene through a uniform, transparent and low-roughness F4-TCNQ/MEK layer
| العنوان: | Optical-quality controllable wet-chemical doping of graphene through a uniform, transparent and low-roughness F4-TCNQ/MEK layer |
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| المؤلفون: | Misseeuw, Lara, Krajewska, Aleksandra, Pasternak, Iwona, Ciuk, Tymoteusz, Strupinski, Wlodek, REEKMANS, Gunter, ADRIAENSENS, Peter, GELDOF, Davy, Blockhuys, Frank, Van Vlierberghe, Sandra, Thienpont, Hugo, Dubruel, Peter, Vermeulen, Nathalie |
| المساهمون: | Misseeuw, Lara, Krajewska, Aleksandra, Pasternak, Iwona, Ciuk, Tymoteusz, Strupinski, Wlodek, REEKMANS, Gunter, ADRIAENSENS, Peter, GELDOF, Davy, Blockhuys, Frank, Van Vlierberghe, Sandra, Thienpont, Hugo, Dubruel, Peter, Vermeulen, Nathalie |
| بيانات النشر: | ROYAL SOC CHEMISTRY |
| سنة النشر: | 2016 |
| المجموعة: | Document Server@UHasselt (Universiteit Hasselt) |
| مصطلحات موضوعية: | graphene, wet-chemical doping, F4-TCNQ, MEK, ketones |
| الوصف: | Controllable chemical doping of graphene has already proven very useful for electronic applications, but when turning to optical and photonic applications, the additional requirement of having both a high transparency and a low surface roughness has, to our knowledge, not yet been fulfilled by any chemical dopant system reported so far. In this work, a new method that meets for the first time this optical-quality requirement while also providing efficient, controllable doping is presented. The method relies on F4-TCNQ dissolved in methyl ethyl ketone (MEK) yielding a uniform deposition after spin coating because of an extraordinary charge transfer interaction between the F4-TCNQ and MEK molecules. The formed F4-TCNQ/MEK layer exhibits a very high surface quality and optical transparency over the visible-infrared wavelength range between 550 and 1900 nm. By varying the dopant concentration of F4-TCNQ from 2.5 to 40 mg ml(-1) MEK, the doping effect can be controlled between Delta n - + 5.73 x 10(12) cm(-2) and + 1.09 x 10(13) cm(-2) for initially strongly p-type hydrogen- intercalated graphene grown on 6H-silicon-carbide substrates, and between Delta n = + 5.56 x 10(12) cm(-2) and + 1.04 x 10(13) cm(-2) for initially weakly p-type graphene transferred on silicon samples. This is the first time that truly optical-quality chemical doping of graphene is demonstrated, and the obtained doping values exceed those reported before for F4-TCNQ-based graphene doping by as much as 50%. ; This work was supported by ERC-FP7/2007-2013 grant 336940, EU-FET GRAPHENICS (grant agreement no. 618086), EU-FP7 Graphene Flagship (grant agreement no. 604391), the Polish National Science Centre UMO-2013/09/N/ST5/02481, BELSPO-IAP, VUB-OZR and Methusalem. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 2046-2069 |
| العلاقة: | RSC ADVANCES, 6(106), p. 104491-104501; http://hdl.handle.net/1942/23043Test; 104501; 106; 104491; 000388111900075 |
| DOI: | 10.1039/c6ra24057g |
| الإتاحة: | https://doi.org/10.1039/c6ra24057gTest http://hdl.handle.net/1942/23043Test |
| حقوق: | This journal is © The Royal Society of Chemistry 2016 ; info:eu-repo/semantics/openAccess |
| رقم الانضمام: | edsbas.94E4A2F9 |
| قاعدة البيانات: | BASE |
| تدمد: | 20462069 |
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| DOI: | 10.1039/c6ra24057g |