التفاصيل البيبلوغرافية
| العنوان: |
n-type SiGe heterostructures for THz intersubband transitions |
| المؤلفون: |
De Seta M. ., Capellini G., Ciasca G., Busby Y., Evangelisti F., Nicotra G., Nardone M., Ortolani M. ., Nucara A., Calvani P., VIRGILIO, MICHELE, GROSSO, GIUSEPPE |
| المساهمون: |
De Seta, M. ., Capellini, G., Ciasca, G., Busby, Y., Evangelisti, F., Nicotra, G., Nardone, M., Ortolani, M. ., Virgilio, Michele, Grosso, Giuseppe, Nucara, A., Calvani, P. |
| بيانات النشر: |
IEEE |
| سنة النشر: |
2009 |
| المجموعة: |
ARPI - Archivio della Ricerca dell'Università di Pisa |
| الوصف: |
Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2 < x < 0.5] or of compressively-strained Ge (sGe) QW confined between high Ge content Si1-xGex barriers [0.8< x < 0.9]. The structural and morphological characterizations of the samples have been made by atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS), transmission electron microscopy (TEM), and Raman spectroscopy. Intersubband transitions have been experimentally investigated by absorption spectroscopy and compared with the theoretical results of a tight-binding model, which provides the electronic band structure of the complete multi quantum well system throughout the whole Brillouin zone. |
| نوع الوثيقة: |
conference object |
| وصف الملف: |
STAMPA |
| اللغة: |
English |
| العلاقة: |
info:eu-repo/semantics/altIdentifier/isbn/9789810836948; ispartofbook:9TH IEEE CONFERENCE ON NANOTECHNOLOGY; 9TH IEEE CONFERENCE ON NANOTECHNOLOGY 2009; firstpage:513; lastpage:514; numberofpages:2; http://hdl.handle.net/11568/229989Test |
| الإتاحة: |
http://hdl.handle.net/11568/229989Test |
| رقم الانضمام: |
edsbas.D3D242D7 |
| قاعدة البيانات: |
BASE |
