دورية أكاديمية
Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy.
| العنوان: | Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy. |
|---|---|
| المؤلفون: | Whelan, Patrick R, De Fazio, Domenico, Pasternak, Iwona, Thomsen, Joachim D, Zelzer, Steffen, Mikkelsen, Martin O, Booth, Timothy J, Diekhöner, Lars, Sassi, Ugo, Johnstone, Duncan, Midgley, Paul A, Strupinski, Wlodek, Jepsen, Peter U, Ferrari, Andrea C, Bøggild, Peter |
| بيانات النشر: | Springer Science and Business Media LLC //dx.doi.org/10.1038/s41598-024-51548-z Sci Rep |
| سنة النشر: | 2024 |
| المجموعة: | Apollo - University of Cambridge Repository |
| مصطلحات موضوعية: | 51 Physical Sciences, 40 Engineering, 4018 Nanotechnology, 5104 Condensed Matter Physics |
| الوصف: | Acknowledgements: We acknowledge funding from the Danish National Research Foundation (DNRF) Center for Nanostructured Graphene (DNRF103), the European Union Quantum Flagship and Graphene Flagship Core 2 (785219) and Core 3 (881603), European Union Horizon 2020 Research and Innovation Programme under Grant Agreement No. 824962 (car2TERA), European Union Seventh Framework Programme (FP7) under grant Agreement No. 604000 (GLADIATOR), Innovation Fund Denmark under grant agreement No. 12-131827 (DA-GATE), ERC grants Hetero2D, GIPT, EPSRC Grants EP/L016087/1, EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/V000055/1, EP/X015742/1 DSTL, EU Grant Graph-X. ; Funder: DSTL ; Terahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformities and small domains due to reconstructions of the substrate during growth. The THz conductivity spectrum matches the predictions of the phenomenological Drude-Smith model for conductors with non-isotropic scattering caused by backscattering from boundaries and line defects. We compare the charge carrier mean free path determined by THz-TDS with the average defect distance assessed by Raman spectroscopy, and the grain boundary dimensions as determined by transmission electron microscopy. The results indicate that even small angle orientation variations below 5° within graphene grains influence the scattering behavior, consistent with significant backscattering contributions from grain boundaries. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf; text/xml |
| اللغة: | English |
| العلاقة: | https://www.repository.cam.ac.uk/handle/1810/364443Test |
| الإتاحة: | https://www.repository.cam.ac.uk/handle/1810/364443Test |
| رقم الانضمام: | edsbas.2177E7FC |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |