دورية أكاديمية
Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials.
| العنوان: | Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials. |
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| المؤلفون: | He, Jijun, Paradisanos, Ioannis, Liu, Tianyi, Cadore, Alisson R, Liu, Junqiu, Churaev, Mikhail, Wang, Rui Ning, Raja, Arslan S, Javerzac-Galy, Clément, Roelli, Philippe, Fazio, Domenico De, Rosa, Barbara LT, Tongay, Sefaattin, Soavi, Giancarlo, Ferrari, Andrea C, Kippenberg, Tobias J |
| بيانات النشر: | American Chemical Society (ACS) Department of Engineering //dx.doi.org/10.1021/acs.nanolett.0c04149 Nano Lett |
| سنة النشر: | 2022 |
| المجموعة: | Apollo - University of Cambridge Repository |
| مصطلحات موضوعية: | MoTe2, layered materials, microresonators, photonic integrated circuits, silicon nitride, transition-metal dichalcogenides |
| الوصف: | Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | Print-Electronic; application/pdf |
| اللغة: | English |
| العلاقة: | https://www.repository.cam.ac.uk/handle/1810/342080Test |
| DOI: | 10.17863/CAM.89497 |
| الإتاحة: | https://doi.org/10.17863/CAM.89497Test https://www.repository.cam.ac.uk/handle/1810/342080Test |
| حقوق: | All Rights Reserved ; http://www.rioxx.net/licenses/all-rights-reservedTest |
| رقم الانضمام: | edsbas.4C695D2A |
| قاعدة البيانات: | BASE |
| DOI: | 10.17863/CAM.89497 |
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