دورية أكاديمية

Low Loss Atomic Layer Deposited Al2O3 Waveguides for Applications in On-Chip Optical Amplifiers

التفاصيل البيبلوغرافية
العنوان: Low Loss Atomic Layer Deposited Al2O3 Waveguides for Applications in On-Chip Optical Amplifiers
المؤلفون: Demirtaş, Mustafa, Odaci, Cem, Perkgöz, Nihan Kosku, Sevik, Cem, Ay, Feridun
المساهمون: Anadolu Üniversitesi, Mühendislik Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü, Sevik, Cem
بيانات النشر: IEEE-Inst Electrical Electronics Engineers Inc
سنة النشر: 2018
المجموعة: Anadolu University Institutional Repository
مصطلحات موضوعية: Planar Waveguides, Optical Losses, Optical Amplifiers, Optical Device Fabrication, Optical Polarization, Laser Applications, Dielectric Waveguides
الوصف: WOS: 000431396300001 ; We present the growth and optimization of ultralow loss Si-based Al2O3 planar waveguides, which have a high potential to boost the performance of rare-earth ion doped waveguide devices operating at visible and C-band wavelength ranges. The planar waveguide structures are grown using thermal atomic layer deposition. Systematic characterization of the obtained thin films is performed by spectroscopic ellipsometry, X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy analyses, and the optimum parameters are identified. The optical loss measurements for both transverse electric (TE) and transverse magnetic polarized light at 633, 829, and 1549 nm are performed. The lowest propagation loss value of 0.04 +/- 0.02 dB/cm for the Al2O3 waveguides for TE polarization at 1549 nm is demonstrated. ; Scientific and Technological Research Council of Turkey [114E594]; Anadolu University Research [BAP1407F335, BAP1606F569, BAP1605F368] ; This work was supported in part by the Scientific and Technological Research Council of Turkey under Grant 114E594 and in part by Anadolu University Research under Projects BAP1407F335, Projects BAP1606F569, and Projects BAP1605F368.
نوع الوثيقة: article in journal/newspaper
وصف الملف: application/pdf
اللغة: English
تدمد: 1077-260X
1558-4542
العلاقة: IEEE Journal of Selected Topics in Quantum Electronics; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; https://dx.doi.org/10.1109/JSTQE.2018.2825880Test; https://hdl.handle.net/11421/20315Test; 24
DOI: 10.1109/JSTQE.2018.2825880
الإتاحة: https://doi.org/10.1109/JSTQE.2018.2825880Test
https://hdl.handle.net/11421/20315Test
حقوق: info:eu-repo/semantics/closedAccess
رقم الانضمام: edsbas.1C47AC61
قاعدة البيانات: BASE
الوصف
تدمد:1077260X
15584542
DOI:10.1109/JSTQE.2018.2825880