التفاصيل البيبلوغرافية
| العنوان: |
Electronic properties of poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene]/Al junctions |
| المؤلفون: |
Taha A Abdalla, Wendimagegn Mammo, Bantikassegn Workalemahu |
| المصدر: |
SINET: Ethiopian Journal of Science; Vol 26, No 1 (2003); 11-16 |
| بيانات النشر: |
Ethiopian Journal of Science |
| سنة النشر: |
2004 |
| المجموعة: |
AJOL - African Journals Online |
| مصطلحات موضوعية: |
Electronic properties, built-in potential, depletion width, impedance spectroscopy, Schottky barrier |
| الوصف: |
Junctions between a single layer of Poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene] and aluminium are studied by means of current–voltage and capacitance-voltage characteristics, and complex impedance spectroscopy. The results indicate the formation of a Schottky barrier type at Poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene]/Al interface. Parameters such as the reverse saturation current, the barrier height and the ideality factor are extracted from the I-V curves. The Cole–Cole plots of complex impedance spectroscopy reveal part of a single semicircle, which can be modeled as a single parallel RC circuit. This suggests that the device is a metal-semiconductor (M-S) type. Capacitance per unit area as well as the width of the depletion layer are obtained from the complex impedance analysis. The built-in potential and the charge carrier concentration are also calculated from C-V curves. Keywords/phrases: Electronic properties, built-in potential, depletion width, impedance spectroscopy, Schottky barrier SINET: Ethiop. J. Sci Vol.26(1) 2003:11-16 |
| نوع الوثيقة: |
article in journal/newspaper |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| العلاقة: |
http://ajol.info/index.php/sinet/article/view/18194Test |
| الإتاحة: |
http://ajol.info/index.php/sinet/article/view/18194Test |
| حقوق: |
Copyright for articles published in this journal is retained by the journal. |
| رقم الانضمام: |
edsbas.A2EEC125 |
| قاعدة البيانات: |
BASE |
